Comments by "kazedcat" (@kazedcat) on "“The Decision of the Century”: Choosing EUV Lithography" video.

  1. We are nowhere near the atomic limits. The node name are marketing name with the actual physical transistor a lot larger than the names imply.
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  2.  @petergerdes1094  We have laboratory demonstration of MoS2 FET with 7.5nm channel length that is half the wavelength of EUV which is 13nm. High NA EUV with quad patterning will have trouble printing at 7.5nm resolution.
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  3. Short answer yes. The long answer leakage is an issue but there are a lot of tricks that can be applied to mitigate the problem. One of this tricks is switching transistor architecture from FINFET into GAAFET
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  4.  @petergerdes1094 First 2nm node process actually has a 20nm wide transistor, silicon latice are 0.2 nm apart so a 2nm transistor has 100 silicon atoms across. Second we are not using bulk silicon property, Field Effect gets stronger the smaller the features are and the only thing that limits things getting smaller are leakage current and quantum tunneling. Both of this limitation has tons of tricks we can use to mitigate the problems. In conclusion we are nowhere near a hard wall that stop shrinking transistor but we are already on a very steep hill and climbing it gets more and more expensive.
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  5.  @petergerdes1094  CMOS only has either N or P type. They work because the field effect of the metal gate directly creates holes or electrons. The doping is done to manipulate the threshold voltage but with enough gate voltage it is possible to force undoped semiconductor to have the same channel effect. Field effect transistor does not require bulk material mechanics. We have laboratory devices that work using a single layer of 2d lattice material. In fact the field effect works much better using 2d material than bulk silicon semiconductor. This is the direction we are going after moving to the nano ribbon silicon gate all around FET The next step is replacing the silicon channel with 2d ribbon material. This is a field effect transistor using a single layer of 2d molecular lattice.
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