Comments by "" (@PainterVierax) on "Silicon Carbide: A Power Electronics Revolution" video.

@RNA0ROGER SiC allows simpler Schottky bridges on main and beyond. No need to redesign a SMPS around a more complex active mosfet bridge to gain efficiency.
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@RNA0ROGER indeed. But as Ken Oliver said they aren't suitable for high voltage applications. Simple Schottky diodes in SiC outperforms GaN FET in many characteristics.
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@RNA0ROGER I don't fully understand your question. For EV, such a bridge rectifier is inside the power regeneration circuit to reduce consumption. This is the complete opposite role of the inverter.
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@RNA0ROGER You kinda lectured me but explaining your primary question would have been way more productive. What do you mean by duplication? duplication of what? I'm not into EV at all so I just named the only use case of a rectifier in that technology. If diodes aren't useful in EV at all then yeah they waited the mostfet to switch to SiC. Although I don't even understand why you brutally transitioned the discussion into EV when we're talking about applications of GaN vs SiC.
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because it's very easy to not know they were sometimes ahead in some tech. Westerners vision of USSR can be strongly disrupted for ideological purposes so nowadays historians have to over-correct the balance to show that the reality is more nuanced than what both camps wanted to spread or filter.
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